The University of Hong KongThe University of Hong Kong
University Central Facilities
Interdisciplinary and Core Research Facilities

Raith PicoMaster 200
Maskless Laser Lithography

The Raith Picomaster 200 is a cutting-edge maskless laser lithography system designed for rapid, flexible, and high-resolution patterning. It enables direct writing without the need for masks, offering sub-micron precision and fast throughput. Ideal for research and prototyping, it supports applications in microelectronics, photonics, and advanced materials development.

Attachments / Specifications:

- 405nm laser source with 300nm optical resolution
- 375nm laser source with 300nm optical resolution
- Additional write modes 600nm and 900nm FWHM

Person-in-charge:

Mr. Yip P. S. - psanyip@hku.hk

Project/ Fund Source:

UDF(2020/21) 020100097, Optical Characterization Facility

SUSS MA/BA6 Gen4
Mask Aligner

SUSS MA/BA6 Gen4 Series mask aligner is a versatile lithography platform designed for high-precision microfabrication. It supports advanced processes including UV lithography, wafer bonding, and imprinting, offering superior alignment accuracy and flexibility. Ideal for R&D and production, it enables reliable patterning across diverse applications in semiconductors and photonics.

Attachments / Specifications:

- Substrate size: up to 150mm round wafers
- TSA alignmTop Side Alignment; ent accuracy: <0.5µm
- LED lamp house (include I-line, G-line, H-line)
- MO Exposure Optics
- Intensity uniformity <2.5%
- Constant dose accuracy: 1.5%
- Resolution down to 0.8 µm L/S (vacuum contact)

Person-in-charge:

Mr. Yip P. S. - psanyip@hku.hk

Project/ Fund Source:

BRC(2020/21)/ UDF(2020/21), Nanofabrication Facilities

Raith EBPG 5200+ (Coming Soon)
100kV Electron Beam Lithography

Raith EBPG 5200+ sets the benchmark in electron beam lithography, delivering unmatched precision and reliability for advanced nanofabrication. Designed for both research and industrial applications, it combines cutting-edge technology with user-friendly operation to achieve superior patterning results. With its high throughput and accuracy, the EBPG 5200+ empowers scientists and engineers to push the boundaries of innovation in microelectronics, photonics, and quantum device development. Overlay accuracy <10 nm makes it ideal for multilayer quantum devices, advanced photonics, and next-gen microelectronics.

Attachments / Specifications:

- Thermal field emission gun with 50 kV and 100 kV Beam Energy
- High current mode up to 350 nA for throughput
- High-resolution mode for sub-5 nm lithography
- Minimum feature size: < 8 nm
- Stitching accuracy: <15 nm (mean + 3σ)
- Overlay accuracy: <10 nm (mean + 3σ)
- Laser-interferometer controlled, wafer-scale handling (up to 200 mm wafers)
- Ultrafast pattern generator at 125 MHz
- Supports 200 mm (8-inch) wafers

Project/ Fund Source:

LREF(2022/23) 020300802, E-beam lithography system

Raith eLine+ (Coming Soon)
Electron Beam Lithography/ Scanning Electron Microscope

Raith eLINE+ is a multifunctional electron beam lithography (EBL) system designed for ultimate versatility, combining high-resolution patterning with advanced imaging and nanoengineering capabilities. It achieves sub-5 nm linewidths, offers a beam size down to 1.2 nm, and integrates FPGA-based pattern generation for precise and complex nanostructures.

Attachments / Specifications:

- Thermal field emission source with beam energy from 100 V to 30 kV
- Beam size: 1.2 nm
- FPGA-based 50 MHz / 20-bit pattern generator
- Laser-interferometer controlled, 2 nm precision, 100 mm × 100 mm travel
- Supports complex fracturing and arbitrary shape generation
- Stitching and overlay accuracy: ~25nm - 40nm (mean + 3σ)
- Demonstrated sub-5 nm linewidths in EBL resist
- 3D module inspection module
- 3Lith is a unique software package for generation and import of 3D GDSII lithography data

Project/ Fund Source:

LREF(2022/23) 020300802, E-beam lithography system